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IRFR/U5505
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
-55
–––
–––
-0.049
––– V V GS = 0V, I D = -250μA
––– V/°C Reference to 25°C, I D = -1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.11
?
V GS = -10V, I D = -9.6A ?
––– R G = 2.6 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-2.0
4.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
28
20
16
-4.0 V V DS = V GS , I D = -250μA
––– S V DS = -25V, I D = -9.6A
-25 V DS = -55V, V GS = 0V
μA
-250 V DS = -44V, V GS = 0V, T J = 150°C
-100 V GS = 20V
nA
100 V GS = -20V
32 I D = -9.6A
7.1 nC V DS = -44V
15 V GS = -10V, See Fig. 6 and 13 ?
––– V DD = -28V
––– I D = -9.6A
ns
––– R D = 2.8 ?, See Fig. 10 ?
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact ?
G
D
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
650
270
120
––– V GS = 0V
––– pF V DS = -25V
––– ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
––– –––
––– –––
-18
-64
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– -1.6 V T J = 25°C, I S = -9.6A, V GS = 0V ?
––– 51 77 ns T J = 25°C, I F = -9.6A
––– 110 160 nC di/dt = 100A/μs ?
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 3.2mH
R G = 25 ? , I AS = -9.6A. (See Figure 12)
? I SD ≤ -9.6A, di/dt ≤ 290A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? This is applied for I-PAK, L S of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
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